http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-201244171-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d5d04736b0b882a4f5a1e0e0e4cd8cbb |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2933-0016 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2933-0025 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-20 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-385 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-44 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-36 |
| filingDate | 2012-03-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9bfe319e4870e9b7e481ca34015aef02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a33c81fdde3951cadf16c356d941c628 |
| publicationDate | 2012-11-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-201244171-A |
| titleOfInvention | Light emitting diode and production method thereof |
| abstract | There is provided a light emitting diode of which protective film and an electrode film thereon having uniform thickness, and a method for producing the light emitting diode. Such a light emitting diode has a mesa structure portion having a top surface, sloping sides and a flat portion at the top, in which at least a portion of each of the flat portion and the mesa structure portion is covered by the protective film and the electrode film, in turn, the sloping sides are formed by wet etching such that the cross section are in a horizontal direction decreases continuously toward the top surface, the protective film covers at least a portion of the flat portion, the sloping sides and the peripheral area of the top surface and has a current-carrying window which exposes a part of the surface of compound semiconductor layer to the inside of the peripheral area in a plane view, the electrode film directly abuts the surface of the compound semiconductor layer which is exposed through the current-carrying window, covers at least a portion of the protective film formed on the flat portion, and is a continuous film which is formed so as to have a light emitting hole at the top surface of the mesa structure portion. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10256387-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-104377218-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9735329-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9634061-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-107256877-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-107256877-B http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-104377218-B |
| priorityDate | 2011-03-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 57.