http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-201244123-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bc57340a7e6c68a81b6126651d89c89c |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-50 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-50 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-042 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-18 |
| filingDate | 2011-04-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7d40fafaf203947b47b108e82124e5fb http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_641d13c7e75acedbb5547dac9e027af9 |
| publicationDate | 2012-11-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-201244123-A |
| titleOfInvention | A method to grow a Si epitaxial layer and therefore embodied a crystalline Si substrate structure |
| abstract | Take advantage of a screen printing method, this invention deposits a layer of a metal paste over at least one full surface area of a crystalline Si substrate, and pass the coated substrate through a beltline furnace with a kind of the belt travel speed, so that the paste may react to the Si, the reaction invokes a liquid phase epitaxial process, a Si epitaxial-layer is thus re-grown on the Si substrate; this Si layer is of either a P type or an N type semiconductor property is controlled through adjusting the dopant component in the metal paste recipe; therefore an embodiment of this invention, a Si substrate modified with a doped epitaxial-layer is disclosed. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9214443-B2 |
| priorityDate | 2011-04-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 79.