| abstract |
Provided are an oxide sintered compact and a sputtering target that are ideal for the production of an oxide semiconductor film for a display device. The oxide sintered compact and sputtering target that are provided have both high conductivity and high relative density, are capable of forming an oxide semiconductor film having a high carrier mobility, and in particular, have excellent direct-current discharge stability in that long-term, stable discharge is possible, even when used by the direct-current sputtering method. The oxide sintered compact of the invention is an oxide sintered compact obtained by mixing and sintering zinc oxide, tin oxide, and an oxide of at least one metal (M metal) selected from the group consisting of Al, Hf, Ni, Si, Ga, In, and Ta. When the in-plane specific resistance and the specific resistance in the direction of depth are approximated by Gaussian distribution, the distribution coefficient s of the specific resistance is 0.02 or less. |