| abstract |
Provided is a polishing composition which contains a polishing material and water. The polishing composition contains the polishing material in an amount of 0.1% by mass or more. The polishing material contains zirconium oxide particles. Each zirconium oxide particle has a specific surface area of 1-15 m<SP>2</SP>/g. It is preferable that the zirconium oxide particles has a purity of 99% by mass or more. For example, the polishing composition is used for the purpose of polishing hard-brittle materials such as sapphire, silicon nitride, silicon carbide, silicon oxide, glass, gallium nitride, gallium arsenide, indium arsenide and indium phosphide. |