| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-517 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0649
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76229 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-762
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
| filingDate |
2012-01-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_414fcea739956c2523176b70a4886a19
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e16b43d9f5a66cfac378eb2eea2e5948
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c539cdc4e52be2e966028227aeed4a42
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_511f3609a58d40381ebdbb8d8b867c59
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8c1c9d57ef5707d30f0575cd110f65c2 |
| publicationDate |
2012-09-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-201238001-A |
| titleOfInvention |
Structure and method for reduction of Vt-W effect in high-k metal gate devices |
| abstract |
A substrate is provided. An STI trench is formed in the substrate. A fill material is formed in the STI trench and then planarized. The substrate is exposed to an oxidizing ambient, growing a liner at a bottom and sidewalls of the STI trench. The liner reduces the Vt-W effect in high-k metal gate devices. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103943621-A |
| priorityDate |
2011-01-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |