http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-201237391-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_366802749d278c1447279515ff2967f3 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N2021-213 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N21-211 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N21-21 |
| filingDate | 2011-11-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7c207b6fb76db5330e1d4ef739c81adc http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8c1cb78b7c3cf6f21dc0481b7728d070 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2de410a2bab36023929ebc42ab29744a |
| publicationDate | 2012-09-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-201237391-A |
| titleOfInvention | Crystallization index acquisition apparatus and crystallization index acquisition method |
| abstract | In a crystallization index acquisition apparatus (1), a theoretical dielectric function (93) of a fine crystal silicon film (5) is represented as the synthesis of a plurality of partial dielectric function models, and a crystallization index κ which indicates the degree of crystallization in the fine crystal silicon film (5) is set on the basis of an amplitude of a high energy peak model (95) out of the plurality of partial dielectric function models. The high energy peak model (95) contributes to a peak (92) on the side of high energy in an imaginary part in a dielectric function of a crystal silicon film. Then, each parameter of a parameter group included in the plurality of partial dielectric function models is represented by the crystallization index κ , a value of each parameter is changed by changing the crystallization index κ to perform fitting of the theoretical dielectric function (93) to a measured dielectric function which is acquired by a spectroscopic ellipsometer (3). Thus, it is possible to acquire a crystallization index κ of the fine crystal silicon film (5) easily and with accuracy. |
| priorityDate | 2011-03-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 20.