http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-201237128-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f517051dd4d265e5e931724f45b34ddc |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09G1-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31053 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K3-1436 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K3-1463 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09G1-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-304 |
| filingDate | 2011-12-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5f27834876438133963e0f653eda5d3d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ee957d5e415c83505114516543573691 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f60d648170da02a98e3d985c37193239 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ab21719e8a92cea9ad8c8bc9f450d0af |
| publicationDate | 2012-09-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-201237128-A |
| titleOfInvention | Chemical mechanical polishing slurry composition and method for producing semiconductor device using the same |
| abstract | A slurry composition for chemical mechanical polishing, including 0.1% to 20% by weight of an aminosilane-surface treated polishing agent; 0.001% to 5% by weight of an additive selected from amino acids, amino acid derivatives, salts thereof, and combinations thereof; 0.0001% to 0.5% by weight of a corrosion inhibitor; and 0.01% to 5% by weight of an oxidizing agent, with the balance being a solvent, is provided. The slurry composition for chemical mechanical polishing has a conspicuously high polishing rate for silicon oxide films, is capable of selectively preventing the removal of silicon nitride films, does not cause an imbalance in polishing, gives an excellent degree of planarization, has excellent stability over time and dispersion stability, causes less generation of particles and scratches, and produces very satisfactory polished surfaces of barrier metal films and oxide films. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I791599-B http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I547553-B http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I793158-B |
| priorityDate | 2010-12-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 171.