| abstract |
This oxide sintered body is obtained by mixing and sintering powders of zinc oxide, tin oxide and indium oxide. As determined by X-ray diffraction of this oxide sintered body, the oxide sintered body has a Zn2SnO4 phase as the main phase and contains an In/In2O3-ZnSnO3 solid solution wherein In and/or In2O3 is solid-solved in ZnSnO3, but a ZnxInyOz phase (wherein x, y and z each represents an arbitrary positive integer) is not detected. Consequently, the present invention was able to provide an oxide sintered body which is suitable for use in the production of an oxide semiconductor film for display devices and has both high electrical conductivity and high relative density. The oxide sintered body is capable of forming an oxide semiconductor film that has high carrier mobility. |