http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-201234602-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_37eca35591a598b124616f188740caf8 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42384 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4908 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-124 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1255 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1288 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
| filingDate | 2011-09-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c01f1d84c0b1b058cffa37b3c1c86fbf |
| publicationDate | 2012-08-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-201234602-A |
| titleOfInvention | Thin-film transistor array substrate and method of fabricating the same |
| abstract | Provided is a thin-film transistor (TFT) array substrate. The TFT array substrate comprises: a substrate; an active layer and a capacitor first electrode formed on the substrate; a gate insulating film formed on the substrate, the active layer and the capacitor first electrode; a gate electrode formed on the gate insulating film corresponding to the active layer and a capacitor second electrode formed on the gate insulating film corresponding to the capacitor first electrode; an interlayer insulating film formed on the gate insulating film, the gate electrode, and the capacitor second electrode; and a pixel electrode, a source electrode, and a drain electrode formed on the interlayer insulating film, wherein at least one of the source electrode and the drain electrode is formed on the pixel electrode. |
| priorityDate | 2011-02-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 39.