| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c186e9ae8cafab5df5c8d80cfa7b0fa1 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S2302-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-2009
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-3213
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-3063
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-3054
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S2304-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-2031
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-320275
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-06 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02579
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-325
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y20-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02458
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02389
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02505
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-34333
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0254
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-028 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-323
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-08 |
| filingDate |
2011-11-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c6a99ef53c4bb76fc4a8681c6b82ca09
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_30852e6bdb59006771c3ffe7b222dd2d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fb9c65e4b3d3c8af59f2c76dab0752b1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_af99fb92be5acc775ce33e09c475e27b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4d9e70b0ba9803d5250f930dbc333ded |
| publicationDate |
2012-08-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-201234415-A |
| titleOfInvention |
Group-iii nitride semiconductor device, method for fabricating group-iii nitride semiconductor device, and epitaxial substrate |
| abstract |
Provided is a Group III nitride semiconductor device, which comprises an electrically conductive substrate including a primary surface comprised of a first gallium nitride based semiconductor, and a Group III nitride semiconductor region including a first p-type gallium nitride based semiconductor layer and provided on the primary surface. The primary surface of the substrate is inclined at an angle in the range of not less than 50 degrees, and less than 130 degrees from a plane perpendicular to a reference axis extending along the c-axis of the first gallium nitride based semiconductor, an oxygen concentration Noxg of the first p-type gallium nitride based semiconductor layer is not more than 51017 cm-3, and a ratio (Noxg/Npd) of the oxygen concentration Noxg to a p-type dopant concentration Npd of the first p-type gallium nitride based semiconductor layer is not more than 1/10. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I744766-B |
| priorityDate |
2010-11-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |