| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bc2b03342511abc88f60c63f2acd96d0 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02T10-70 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-92
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-0008
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01G7-06 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01M2-14 |
| filingDate |
2011-07-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_100eb66a5897148623d8e41a4cf686ae
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e4667e5485b8ee05b195d364af1907dd
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f5fbf60faa90cae7a3f35faf716a8961 |
| publicationDate |
2012-08-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-201232891-A |
| titleOfInvention |
Energy storage device with large charge separation |
| abstract |
High density energy storage in semiconductor devices is provided. There are two main aspects of the present approach. The first aspect is to provide high density energy storage in semiconductor devices based on formation of a plasma in the semiconductor. The second aspect is to provide high density energy storage based on charge separation in a p-n junction. |
| priorityDate |
2010-07-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |