| abstract |
According to one embodiment, a pattern including first and second block phases (21, 22) is formed by self-assembling a block copolymer (20) onto a film (11) to be processed. The entire block copolymer (20) present in a first region is removed under a first condition by carrying out energy beam irradiation and development, thereby leaving a pattern including the first and second block phases (21, 22) in a region other than the first region. The first block phase (21) present in a second region is selectively removed under a second condition by carrying out energy beam irradiation and development, thereby leaving a pattern including the first and second block phases (21, 22) in an overlap region between a region other than the first region and a region other than the second region, and leaving a pattern of second block phase (22) in the second region excluding the overlap region. The film (11) is etched with the left patterns as masks. |