| abstract |
The objective of the present invention is to provide: a pattern-forming method that has superior lithographic properties of resolution, circularity, and the like, and suppresses the incidence of missing contact holes and roughness of the exposed surface after development; and a radiation-sensitive composition that is optimal in the pattern-forming method. The pattern-forming method contains (1) a step for forming a resist film on a substrate using the radiation-sensitive composition, (2) an exposure step, and (3) a development step, and is characterized by: the developing liquid in the development step (3) containing at least 80 mass% of an organic solvent; the radiation-sensitive composition containing [A] a polymer containing a structural unit having an acid-dissociating group, and [B] at least two components including a radiation-sensitive acid generator; and one of the components in the radiation-sensitive composition having a group represented by formula (1). |