http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-201227972-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_986d0ab29fa7910a46cd21a12d682fe4 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-466 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K71-621 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-82 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate | 2011-11-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fd025a9e9d62ce882dc6c6b31280a8ec |
| publicationDate | 2012-07-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-201227972-A |
| titleOfInvention | Method for fabricating thin-film bottom-contact transistors and bottom-contact transistors thus obtained |
| abstract | A bottom contact thin film transistor is disclosed, comprising a dielectric layer provided on a substrate; a first electrode and a second electrode provided on said dielectric layer; a semiconductor layer overlaying said first and said second electrode and said dielectric layer, wherein said first electrode and said second electrode comprise a stack or layer combination of a first patterned layer being a thin layer comprising a noble metal, and a second patterned layer being a thicker layer comprising a less noble metal with good electrical conductivity; and method for manufacturing such devices. |
| priorityDate | 2010-11-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 85.