| abstract |
A photoelectric conversion element is provided, which can contribute to providing high photoelectric conversion efficiency, low dark current properties and high-speed response properties, and does not generate decomposed compounds during vapor deposition. A compound with a specific structure is provided, which has a maximum absorbance at a wavelength no less than 400 nm and less than 720 nm in UV-Vis absorption spectrum. The molar absorptivity of the maximum absorbance is no less than 10000 mol<SP>-1</SP>* 1* cm<SP>-1</SP>, and the difference the difference between the melting point and the temperature of vapor deposition (the melting point minus the temperature of vapor deposition) is no less than 31 DEG C. |