http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-201223131-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ab054d4fd1810c2c2350c52d00de0add |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03K3-0315 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03K3-012 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H03B5-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H03K3-354 |
| filingDate | 2011-05-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_626bc4261f9de7a1a33da715449bbaf8 |
| publicationDate | 2012-06-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-201223131-A |
| titleOfInvention | An ultra low power oscillator |
| abstract | A frequency generator is provided which is embodied in an integrated circuit manufactured at a process node below 100nm. The frequency generator comprises a current starved oscillator configured to generate an output frequency signal in dependence on a voltage of a bias signal and a self-biased current generator configured to generate the bias signal, wherein the self-biased current generator comprises a first transistor and a second transistor connected in series. The bias signal is taken from a midpoint between the first transistor and the second transistor, and respective gates of the first and second transistors are connected to keep said first and second transistors in a cut-off state. Accordingly the self-biased current generator operates in a deep sub-threshold state and a current of said bias signal is dependent on a leakage current in the first and second transistors. |
| priorityDate | 2010-06-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 21.