Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-548 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-547 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-52 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-546 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-50 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-202 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-022425 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-028 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0236 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-075 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-076 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1804 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-182 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0288 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-03529 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-03762 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-035281 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-03682 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-042 |
filingDate |
2011-06-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_21747acfb77b0d181ab4dff0d66658d4 |
publicationDate |
2012-04-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
TW-201216487-A |
titleOfInvention |
Photoelectric conversion device and manufacturing method thereof |
abstract |
A photoelectric conversion device having a new anti-reflection structure is provided. A photoelectric conversion device includes a first-conductivity-type crystalline semiconductor region that is provided over a conductive layer; a crystalline semiconductor region that is provided over the first-conductivity-type crystalline semiconductor region and has an uneven surface by including a plurality of whiskers including a crystalline semiconductor; and a second-conductivity-type crystalline semiconductor region that covers the uneven surface of the crystalline semiconductor region having the uneven surface, the second conductivity type being opposite to the first conductivity type. In the photoelectric conversion device, a concentration gradient of an impurity element imparting the first conductivity type is formed from the first-conductivity-type crystalline semiconductor region toward the crystalline semiconductor region having the uneven surface. |
priorityDate |
2010-06-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |