http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-201216323-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ddbd9538efce6e134d471b912946264e |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 |
| filingDate | 2010-10-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2fc255ce53601fcf9e6fbd526df6e9ec http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5a1bd50b9d3ad5b96b2bf19a33b4cfc3 |
| publicationDate | 2012-04-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-201216323-A |
| titleOfInvention | Semiconductor process |
| abstract | A semiconductor process is provided. A wafer with a material layer formed thereon is provided, wherein the wafer has a center area and an edge area surrounding the center edge. A negative photoresist layer is formed on the material layer. A wafer edge expose process is performed to the negative photoresist layer disposed on the edge area. By using a photomask as a mask, an exposure process is performed to the negative photoresist layer disposed on the center area and the edge area. A developing process is performed to the exposed negative photoresist layer to form a patterned negative photoresist layer. By using the patterned negative photoresist layer as a mask, the material layer is patterned to form a patterned material layer. The patterned negative photoresist layer is removed. |
| priorityDate | 2010-10-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 17.