| abstract |
Disclosed are: a Cu-In-Ga-Se powder which contains Cu, In, Ga and Se and is free from occurrence of cracks during sintering or processing; and a sintered body and a sputtering target, each of which uses the Cu-In-Ga-Se powder. Specifically disclosed is a powder containing Cu, In, Ga and Se, which is characterized by containing a Cu-In-Ga-Se compound and/or a Cu-In-Se compound in an amount of 60% by mass or more in total. It is preferable that the powder contains 20% by mass or less of an In-Se compound and/or 20% by mass or less of a Cu-In compound. |