http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-201215674-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6fc8bbba7dbfdc1fe42f350fc84e17a3 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C11D7-263 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C11D7-261 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0273 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C11D7-5022 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C11D11-0047 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-422 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-426 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31133 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02063 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C11D7-261 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C11D7-263 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3046 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C11D7-265 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C11D7-50 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C11D7-26 |
| filingDate | 2011-09-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8f6680b25cb32096c13bb11298053638 |
| publicationDate | 2012-04-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-201215674-A |
| titleOfInvention | Liquid composition for removing photoresist residue and polymer residue |
| abstract | The present invention provides a liquid composition for removing a photoresist residue and a polymer residue to remove a photoresist residue and a polymer residue occurred in a process of manufacturing a semiconductor circuit device having a metal wiring and also provides a process of removing residue by using it. Specially, the present invention provides a liquid composition for removing a photoresist residue and a polymer residue, comprising an aliphatic polycarboxylic acid as residue removing component, with a melting point of 25 DEG C or more having excellent property of removing a residue being mainly composed of a metal oxide, but no nitrogen-containing organic hydroxyl compound, ammonia, or fluorine compound is contained. As well as it is able to suppress the recrystallization of the aliphatic polycarboxylic acid by evaporation of water after the liquid attached to a nozzle, a cleaning tank, or a chamber of a cleaning device; and also provides a process of removing residue by using it. The aforesaid removing liquid comprises a removing liquid including a water-mixable organic solvent having a vapor pressure of 17 mmHg or less at 20 DEG C and having a hydroxyl group in structure in the liquid composition for removing the photoresist residue and the polymer residue that includes an aliphatic polycarboxylic acid with a melting point of 25 DEG C or more. |
| priorityDate | 2010-09-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 56.