http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-201215564-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_63e6301e891da6e82ddce00a4ccba114 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01G15-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09D11-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B22F3-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-34 |
| filingDate | 2010-10-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_78f88c4481acba6b25d78acdcebd5c18 |
| publicationDate | 2012-04-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-201215564-A |
| titleOfInvention | Multicomponent metal sulfur-family compound and its manufacturing method |
| abstract | A multicomponent metal sulfur-family compound and its manufacturing methodare disclosed, which is applied to an environment of preparing the target of a semiconductor thin-film solar cell and/or the ink's precusor material. When the manufacturing method of the multicomponent metal sulfur-family compound of the present invention is utilized to synthesize the nano-powder of the multicomponent metal sulfur-family compound, a pure element (Cu/In/Ga/Se/S) with purity of 3N5-5N and/or a selenium compound and/or a sulfur compound can be adopted as the initiating material. The contained above one metal element can be selected from the pure element powder of the constituent element as a whole, and/or can be concocted according to the atom's ratio by utilizing at least one metal alloy powder to carry out the synthesis under the condition of normal pressure without water and oxygen through liquid-phase synthesis, in which one or more than one solvents of organic compounds of N-chelant chelating compounds are adopted in the synthesis manufacturing process. These N-chelant chelating compounds have the boiling point higher than 180 DEG C and the weak alkaline with pH value in between 7 and 10. Thus, the multicomponent metal sulfur-family compound such as the compound with elements of Cu-In-Ga-Se-S can be generated by the chelating reaction under high temperature. The compound with elements of Cu-In-Ga-Se-S is the target of semiconductor thin-film solar cell and/or the ink's precusor material. |
| priorityDate | 2010-10-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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