http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-201213269-A

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filingDate 2011-08-17-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c9c5a063c1acd123255024015b48f9a8
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publicationDate 2012-04-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-201213269-A
titleOfInvention Composition for formation of thick film conductor, thick film conductor formed by using the composition and chip resistor using the thick film conductor
abstract Provided is a lead-free composition for formation of thick film conductors with low cost, which has excellent sulfidation resistance and solder corrosion resistance. This invention relates to a composition for forming a thick film conductor used as an electrode of a chip resistor. The composition of this invention contains Ag powder as conductive powder, and SiO2-B2O3-Al2O3-CaO-Li2O based glass powder and Al2O3 powder as oxide powder, and is added with carbon powder as an additive. With respect to 100 mass parts of the conductive powder, the carbon powder is 1 to 10 mass parts, the glass powder is 0.1 to 15 mass parts, the Al2O3 powder is 0.1 to 8 mass parts. The composition ratio of the glass powder is: SiO2: 20 to 60 mass parts, B2O3 2 to 25 mass parts, Al2O3: 2 to 25 mass parts, CaO: 20 to 50 mass parts, and Li2O: 0.5 to 6 mass parts.
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