| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fec576c38e34882531ca37d6b922bf42 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0206
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-302
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3105
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09D183-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02057 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K3-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C07F7-18 |
| filingDate |
2011-05-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f02a2a66da89d96900d03ac58e43a1e4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b3c9de8e17deb76acd01d2e187f11ef2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_41b1f57cd45fff2149f4a1f1492eeb94
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7ff651eff6fc8ba8d837a5260f894108
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f6990198dd6b31314b784d3cde874cbe
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_aed3da245984185c752ee62935ace589
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2c2bdd6dc202dc9e38663ed7bae4c128
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5f4d3b074e2692f1e6dbefd6ffaba251 |
| publicationDate |
2012-03-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-201211228-A |
| titleOfInvention |
Chemical for forming protective film |
| abstract |
Disclosed is a chemical that, when washing a wafer (1) that has a minute concavo-convex pattern (2) on the surface thereof and at least a portion of said concavo-convex pattern (2) contains the element silicon, is for forming a water-repellent protective film (10) on at least the concave surfaces of said concavo-convex pattern (2). The chemical contains a base that contains no more than 35 mass% of: an acid and a silicon compound (A) represented by the general formula R1 aSi(H)b(X)4-a-b; or water and a silicon compound (C) represented by the general formula R7 gSi(H)h(CH3)w(Z)4-g-h-w. The total amount of water in the starting material of the aforementioned chemical is no greater than 5000 ppm by mass of the total amount of said starting material. The chemical can improve washing steps that easily induce pattern collapse. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I813614-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I657126-B |
| priorityDate |
2010-05-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |