http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-201209957-A

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assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_664f5b543543aac4cf0153a4ef4e0f85
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-6831
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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-683
filingDate 2011-05-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_018214d01ec8f74462e4a2ae2ebc2085
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_09b1f2abcb9ecf695e73e3ebbbaa4c57
publicationDate 2012-03-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-201209957-A
titleOfInvention Substrate supports for semiconductor applications
abstract This invention relates to substrate supports, e.g., coated electrostatic chucks, having a dielectric multilayer formed thereon; dielectric multilayers that provide erosive and corrosive barrier protection in harsh environments such as plasma treating vessels used in semiconductor device manufacture; process chambers, e.g., deposition chambers, for processing substrates; methods for protecting substrate supports; and methods for producing substrate supports and electronic devices. The dielectric multilayer comprises (a) an undercoat dielectric layer comprising a metal oxide or metal nitride formed on a surface; and (b) a topcoat dielectric layer comprising a metal oxide formed on the undercoat dielectric layer. The topcoat dielectric layer has an aluminum oxide content of less than about 1 weight percent. The topcoat dielectric layer has a corrosion resistance and/or plasma erosion resistance greater than the corrosion resistance and/or plasma erosion resistance of the undercoat dielectric layer. The undercoat dielectric layer can have a resistivity greater than the resistivity of the topcoat dielectric layer. The topcoat dielectric layer can have a dielectric constant greater than the dielectric constant of the undercoat dielectric layer. The undercoat dielectric layer can have a porosity greater than the porosity of the topcoat dielectric layer. The invention is useful, for example, in the manufacture and protection of electrostatic chucks used in semiconductor device manufacture.
priorityDate 2010-05-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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