| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_62f941494409aea84f621977c5f0ab81
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_69108fc12b940ede105638f37f06080b |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-466
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-464
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-6572
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-342
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-113
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-621
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-151
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-211 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y10-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-484
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-486
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-654
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K71-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-341 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-05
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C07F1-08 |
| filingDate |
2011-04-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4f4b35dcdefec67d0311df364f395219
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b0a92365fb3161b294a59944b67d53ed
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e731ed48809287ce0903825924590fa5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5bb28e0aafaca0da1e9620cca2cfcb7c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c6c2e0ada00946a370aede2d70b8205a |
| publicationDate |
2012-02-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-201205912-A |
| titleOfInvention |
Remote n-doping of organic thin film transistors |
| abstract |
The inventions disclosed, described, and/or claimed herein relate to organic electronic devices comprising ''remotely'' doped materials comprising a combination of at least three layers. Such devices can include remotely n-doped structures comprising a combination of at least three layers: a. a channel layer comprising at least one organic semiconductor channel material; b. a dopant layer which comprises at least one organic electron transport material doped with an n-dopant material c. a spacer layer disposed between and in electrical contact with the channel layer and the dopant layer, comprising an organic semiconducting spacer material. The devices of the invention include ''remotely doped'' field effect transistors comprising the doped structures described above. |
| priorityDate |
2010-04-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |