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publicationDate 2012-01-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-201203403-A
titleOfInvention Semiconductor element and fabrication method thereof
abstract Proposed is a semiconductor element and fabrication method thereof, comprising forming an encapsulating layer on a semiconductor silicon substrate having electrode pads and a protection layer formed thereon for encapsulating electrode pads and parts of its surrounding protective layer therein; forming a covering layer on the protective layer and the encapsulating layer with an opening exposed from parts of the encapsulating layer; forming a bonding metallic layer on parts of the encapsulating layer that are exposed from the opening and electrically connecting the bonding metallic layer to the encapsulating layer, wherein the diameter size of the metallic layer is smaller than or equal to that of the encapsulating layer; and forming a conductive element on an outer surface of the bonding metallic layer. The encapsulating layer provides a good buffering effect to prevent electrode pads from delamination or being damaged by the direct pressure transferred from the conductive element.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I490994-B
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