Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d80f1040809503e54509c871ba828f75 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67184 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02074 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76826 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76828 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76829 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7684 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76849 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76883 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67207 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3105 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
filingDate |
2011-03-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cde38b89b68600de89a235531da675a0 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_55cec2bfdcb4a8099555b99b0423e3c9 |
publicationDate |
2012-01-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
TW-201203369-A |
titleOfInvention |
Surface cleaning and selective deposition of metal-containing cap layers for semiconductor devices |
abstract |
A method is provided for integrating metal-containing cap layers into copper (Cu) metallization of semiconductor devices. In one embodiment, the method includes providing a planarized patterned substrate containing metal surfaces and dielectric layer surfaces with a residue formed thereon, removing the residue from the planarized patterned substrate, and depositing metal-containing cap layers selectively on the metal surfaces by exposing the dielectric layer surfaces and the metal surfaces to a deposition gas containing metal-containing precursor vapor. The removing includes treating the planarized patterned substrate containing the residue with a reactant gas containing a hydrophobic functional group, and exposing the treated planarized patterned substrate to a reducing gas. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I763324-B http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10964527-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I714096-B http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I755934-B |
priorityDate |
2010-03-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |