Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_019cbf9e748800999e2d3f4eb871da42 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C2201-0104 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81B2203-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81B2207-07 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C1-00095 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C1-00611 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-304 |
filingDate |
2011-02-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5d7af85e45eeae107261a27b4bac1315 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_abf7707e0a78cb2955f14fa328016519 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1a4a11bccae5300d8568907f26a9f88b http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f367bd2d00aacd94c9f95f263e97acfa |
publicationDate |
2011-12-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
TW-201145375-A |
titleOfInvention |
CMP process flow for MEMS |
abstract |
The present invention generally relates to the formation of a micro-electromechanical system (MEMS) cantilever switch in a complementary metal oxide semiconductor (CMOS) back end of the line (BEOL) process. The cantilever switch is formed in electrical communication with a lower electrode in the structure. The lower electrode may be either blanket deposited and patterned of simply deposited in vias or trenches of the underlying structure. The excess material used for the lower electrode is then planarized by chemical mechanical polishing or planarization (CMP). The cantilever switch is then formed over the planarized lower electrode. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I562275-B |
priorityDate |
2010-03-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |