| abstract |
A low-dielectric insulating layer of the present invention is formed by a plasma CVD method and includes at least carbon and silicon, wherein ratio of the carbon to the silicon is 2.5 or more, and relative dielectric constant is 3.8 or less. Also, a film formation method of a low-dielectric insulating layer of the present invention includes a film formation step using an insulation film material that includes at least carbon and silicon by a plasma CVD method, wherein hydrocarbon is not used as the insulation film material, and in the formed low-dielectric insulating layer, ratio of the carbon to the silicon is 2.5 or more, and relative dielectric constant is 3.8 or less. |