http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-201141308-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_141ad0f32f33acbd76bfcb14b77149a2 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-502 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-08 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K11-574 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-0016 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K11-7745 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05B33-22 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K11-0822 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05B33-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05B33-22 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05B33-14 |
| filingDate | 2011-04-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_98f521a4a3e500cd1337b66ca23a8757 |
| publicationDate | 2011-11-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-201141308-A |
| titleOfInvention | DC-driven electroluminescence device and light emission method |
| abstract | An inorganic electroluminescence device is provided that can be made to emit light by applying a DC voltage to an inorganic fluorescent substance and can be changed as suited in luminescence color by changing the type of luminescent centers or phosphor dispersed in a phosphor layer. An inorganic electroluminescence device is prepared to have a structure in which an NPN type structure, formed from semiconductors in an interior of a DC-driven luminescence device, has a phosphor substance vapor deposited adjacent thereto and is thereafter sandwiched by a first electrode and a second electrode. Using this structure, a forward direction voltage is applied to a PN junction at a cathode side to inject electrons into a P-type semiconductor layer. Further by this method, luminescence is obtained by using an electric field of a depletion layer, which is made to spread in an interior of an N-type semiconductor acceleration layer by reverse-biasing of a PN junction portion formed by the P-type semiconductor layer and the acceleration layer, to accelerate and make the electrons collide with the luminescent centers or the phosphor. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9261730-B2 |
| priorityDate | 2010-06-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 38.