| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02D30-70
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2223-6677 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0688
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G06K19-07
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G06K19-07749
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H04B1-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G06K19-07773
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1033
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1225 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G06K19-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G06K19-077
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G06K19-07
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C11-401 |
| filingDate |
2010-11-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8bb761a089dba691e10fe050a316ea73
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_01586b738d5c3da823a8b306e0b71efa |
| publicationDate |
2011-11-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-201140845-A |
| titleOfInvention |
Semiconductor device |
| abstract |
An object is to achieve low power consumption and a long lifetime of a semiconductor device having a wireless communication function. The object can be achieved in such a manner that a battery serving as a power supply source and a specific circuit are electrically connected to each other through a transistor in which a channel formation region is formed using an oxide semiconductor. The hydrogen concentration of the oxide semiconductor is lower than or equal to 5 * 10<SP>19</SP> (atoms/cm<SP>3</SP>). Therefore, leakage current of the transistor can be reduced. As a result, power consumption of the semiconductor device in a standby state can be reduced. Further, the semiconductor device can have a long lifetime. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9293589-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I700807-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I722331-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10243081-B2 |
| priorityDate |
2009-11-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |