| abstract |
An etchant for selectively etching a doped semiconductor layer interposed between a metal electrode and an intrinsic semiconductor layer in an electronic device with respect to the intrinsic semiconductor layer, in which the etchant includes one selected from the group consisting of a transition metal, a transition metal salt, and a mixture thereof; and one selected from the group consisting of a hydrofluoric acid, an inorganic salt containing fluorine, and a mixture thereof. |