| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02554
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78693
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02565
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-45
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-2206
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-221
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4908
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78648
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66969
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-263
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42356
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78606
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-045
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02631 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
| filingDate |
2010-11-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_21747acfb77b0d181ab4dff0d66658d4 |
| publicationDate |
2011-11-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-201138111-A |
| titleOfInvention |
Semiconductor device and manufacturing method thereof |
| abstract |
An embodiment is a semiconductor device which includes a first oxide semiconductor layer over a substrate having an insulating surface and including a crystalline region formed by growth from a surface of the first oxide semiconductor layer toward an inside; a second oxide semiconductor layer over the first oxide semiconductor layer; a source electrode layer and a drain electrode layer which are in contact with the second oxide semiconductor layer; a gate insulating layer covering the second oxide semiconductor layer, the source electrode layer, and the drain electrode layer; and a gate electrode layer over the gate insulating layer and in a region overlapping with the second oxide semiconductor layer. The second oxide semiconductor layer is a layer including a crystal formed by growth from the crystalline region. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9472679-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10559699-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10872981-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9166055-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11355645-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9819261-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I580047-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10158026-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10630176-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I665792-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9559213-B2 |
| priorityDate |
2009-11-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |