| abstract |
This invention provides etching liquid for multilayer thin films containing copper and molybdenum layers and an etching method for the multilayer thin films containing copper and molybdenum layers using the etching liquid. This invention relates to an etching liquid for multilayer thin films containing copper and molybdenum layers that has values of pH in the range of 2.5 to 5 and contains (A) hydrogen peroxide, (B) inorganic acid containing no fluorine atom, (C) organic acid, (D) amine compounds that have the carbon number 2 to 10 and contain amino groups and hydroxyl groups so that the total number of these groups exceeds two, (E) azoles, and (F) hydrogen peroxide stabilizer, and also relates to an etching method using the above etching liquid. |