| abstract |
A high voltage semiconductor transistor and a method of making it are provided in this disclosure. The transistor includes a semiconductor substrate, a gate structure formed on the substrate, a source and a drain formed in the substrate on either side of the gate structure, a first doped well formed in the substrate, and a second doped well formed in the first well. One portion of the second well surrounds the source and the other portion of the second well extends laterally from the first portion in the first well. |