| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_cb5746eb832dced6146d31f543e23b29 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B63-84
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B63-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-8845
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-821
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-023
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-068 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-115
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8247 |
| filingDate |
2011-02-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_eec3ff48b0b1eaedbb232105164dc8bc
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_efc8a28112920e058dc164fc5b0fe4ec |
| publicationDate |
2011-10-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-201135873-A |
| titleOfInvention |
A memory cell that includes a carbon-based memory element and methods of forming the same |
| abstract |
A method of forming a reversible resistance-switching metal-carbon-metal ("MCM") device is provided, the device including a first conducting layer, a second conducting layer, and a reversible resistance-switching element disposed between the first and second conducting layers, wherein the reversible resistance-switching element includes thermal CVD graphitic material and includes a highly resistive region that favors crack formation. Other aspects are also provided. |
| priorityDate |
2010-02-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |