http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-201133629-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d79a3714d75520adeea100b7ed428a77 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-146 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02573 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0245 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3225 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1464 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02378 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02658 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02381 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-322 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-146 |
| filingDate | 2010-09-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d3f549581f1ee2ff4ee5b2683f9f3204 |
| publicationDate | 2011-10-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-201133629-A |
| titleOfInvention | Epitaxy substrate for backside irradiate-type image sensor and fabricating method thereof |
| abstract | An epitaxy substrate for backside irradiate-type image sensor and fabricating method thereof, and by maintaining a sufficient gettering ability in device process, metal contamination can be restrained and generation of white defeat of image sensor can be decreased. The fabricating method of the epitaxy substrate for backside irradiate-type image sensor is characterized in that it includes: a step for gettering sink formation under a surface of a high oxygen silicon substrate; a step for a first epitaxy layer formation on the surface of the high oxygen silicon substrate; and a step for a second epitaxy layer formation on the first epitaxy layer. The step for the gettering sink formation includes: performing a long period heat treatment to the high oxygen silicon substrate at 650 DEG C to 1150 DEG C to form an oxygen educt area. |
| priorityDate | 2009-09-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 35.