| abstract |
A method for manufacturing an epitaxial silicon wafer is provided to decrease the LPD density of the wafer surface that has been mirror-polished and to decrease the roughness of the wafer surface, wherein the LPD density is generated due to process. Therefore, an epitaxial silicon wafer with low LPD density and good surface roughness can be obtained. A polishing liquid without polishing particles but with alkaline solution having water-soluble polymer is used to mirror-polish the wafer surface. The friction coefficient decreases because the water-soluble polymer is added into the alkaline solution. Thus, the LPD density decreases, and an epitaxial silicon wafer with low LPD density can be obtained. Further, the roughness of the wafer surface that has been mirror-polished can be decreased, and an epitaxial silicon wafer with good surface roughness can be obtained. |