http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-201133590-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_31b1220216408a6076f55e0ba4ec1003 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76256 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-30 |
| filingDate | 2010-10-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1774335301a31e7baa6c26a2cfe8df61 |
| publicationDate | 2011-10-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-201133590-A |
| titleOfInvention | Process for fabricating a heterostructure with minimized stress |
| abstract | Process for fabricating a heterostructure comprising a step (S5) of bonding a first wafer (110) to a second wafer (120), the first wafer (110) having a thermal expansion coefficient that is lower than the thermal expansion coefficient of the second wafer (120), and at least one bond-strengthening annealing step (S7). The process is particularly characterized in that it comprises, after the bonding step (S5) and before the bond-strengthening annealing step (S7), at least one trimming step (S5) in which the first wafer (110) is at least partially trimmed. |
| priorityDate | 2009-12-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID449266279 http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID15913 |
Total number of triples: 13.