http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-201133570-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d79a3714d75520adeea100b7ed428a77 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76243 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-265 |
| filingDate | 2010-09-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d3441dc10e654762d05a9a88ad3fe1ed http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_184278c00a1e9c209d03b51ff3b73d69 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_56821adbabb32e32df105392d27d629a |
| publicationDate | 2011-10-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-201133570-A |
| titleOfInvention | Epitaxial wafer and method of producing same |
| abstract | A method of producing an epitaxial wafer, comprising: implanting oxygen ions from a surface of a silicon wafer, thereby forming an ion implanted layer in a surface layer of the silicon wafer; after forming the ion implanted layer, implanting boron ions from the surface of the silicon wafer to the whole area in the ion implanted layer; performing heat treatment of the ion implanted layer after implanting boron ions, thereby forming a thinning-stopper layer including a mixture of silicon particles, silicon oxides, and boron, and forming an active layer in the silicon wafer on the surface side of the thinning-stopper layer; and forming an epitaxial layer on the surface of the silicon wafer after the heat treatment. |
| priorityDate | 2009-10-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 33.