http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-201133135-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_24aca9ded2638ea793d05360dde7a4a0 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0047 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0046 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0045 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0035 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0002 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-027 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0271 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0397 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-40 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-004 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C07C381-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 |
| filingDate | 2010-12-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7504b6464847008bffd1808536c8ecb0 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_faab0c1404d6c0adb7fb953bd08f73a1 |
| publicationDate | 2011-10-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-201133135-A |
| titleOfInvention | Process for producing photoresist pattern |
| abstract | The present invention provides a process for producing a photoresist pattern comprising the following steps (A) to (D): (A) a step of applying a first photoresist composition comprising a resin comprising a structural unit having an acid-labile group in its side chain, an acid generator and a cross-linking agent on a substrate to form a first photoresist film, exposing the first photoresist film to radiation followed by developing the first photoresist film exposed with an alkaline developer, thereby forming a first photoresist pattern, (B) a step of making the first photoresist pattern inactive to radiation in the following step (C), making the first photoresist pattern insoluble in an alkaline developer or making the first photoresist pattern insoluble in a second photoresist composition used in the following step (C), (C) a step of applying a second photoresist composition comprising a resin comprising a structural unit having an acid-labile group in its side chain and at least one acid generator selected from the group consisting of photoacid generators represented by the formulae (I) and (II): wherein R1, R2, R4 and R5 independently a C1-C12 alkyl group etc., R3 represents a C1-C12 alkyl group, R6 represents a hydrogen atom etc, R7 represents a C1-C12 alkyl group etc., and A1- and A2- independently represent an organic anion, on the first photoresist pattern obtained in the step (B) to form the second photoresist film, exposing the second photoresist film to radiation, and (D) a step of developing the second photoresist film exposed with an alkaline developer, thereby forming the second photoresist pattern. |
| priorityDate | 2010-01-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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