http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-201131651-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_82cbc291d77c061ac9a216f86ec010a3 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-401 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02216 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-486 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02277 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31 |
| filingDate | 2010-10-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9f231fbafa1ed4abd272602ed1b44bec http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2e1356d390747fed5936cda99136a1dc http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_302dccc8ff9c065599b8f7c0ff667251 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e1db52475f20c4aa0616bab0e16f37e0 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cf40058fee73cfd00cf56e59555d9e8c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_eb087417f92593f3f1dfc4a384f1dd70 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_79b83e0ed9660560dca752d19df6189d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4fb92c6a39bf5d73d49054c12a47698b |
| publicationDate | 2011-09-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-201131651-A |
| titleOfInvention | Low dielectric constant insulating film |
| abstract | To provide a low dielectric constant insulating film with low dielectric constant, high strength and high plasma damage resistance. The low dielectric constant insulating film includes a polymer including a plurality of straight chain molecules 2, 3, and 4 in which a plurality of basic molecules 1 including SiO structures are coupled in a straight chain and which are coupled by providing binder molecules 5 including the SiO structures in between and includes Si atoms, O atoms, C atoms and H atoms. When the total of three types of signal areas of a signal showing a linear SiO structure, a signal showing a network SiO structure and a signal showing a cage SiO structure among peak signals of a spectrum obtained by Fourier transform infrared spectroscopy is set to be 100%, an area ratio of the signal showing the linear SiO structure is ≥ 49%. When the total of a signal amount showing Si(CH<SB>3</SB>) and that showing Si(CH<SB>3</SB>)<SB>2</SB>is set to be 100% among the peak signals of the spectrum, the signal amount showing Si(CH<SB>3</SB>)<SB>2</SB>is ≥ 66%. |
| priorityDate | 2009-10-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 56.