http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-201123446-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_3c754156d9ab873a2efe5a3990dbf627 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-76 |
| filingDate | 2009-12-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_71a47d62fbd2fbc3fd17dcb00d2bac1c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_011a89626d183842e6fcc20a55c63386 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3cbc4b6d7e7735bb87b7531bf4a90548 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0f4b16d1bdb251e7131454b9e03b07f7 |
| publicationDate | 2011-07-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-201123446-A |
| titleOfInvention | Semiconductor device structure and method for manufacturing the same |
| abstract | The semiconductor device structure includes a substrate, an oxide semiconductor transistor and a passivation layer containing free hydrogen. The gate electrode is formed on the substrate. The gate dielectric layer covers the gate electrode. The source electrode is formed on the gate dielectric layer. The drain electrode is formed on the gate dielectric layer and spaced from the source electrode with a channel distance. The oxide semiconductor layer is formed on the gate dielectric layer, the source electrode and the drain electrode and between the source electrode and the drain electrode. The oxide semiconductor layer is further electrically connected with the source electrode and the drain electrode. The passivation layer covers the oxide semiconductor layer, the source electrode and the drain electrode. The passivation layer has a trench formed therein, and the trench surrounds the oxide semiconductor layer. |
| priorityDate | 2009-12-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 28.