http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-201123214-A

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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01B5-14
filingDate 2009-12-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e4d3f29dd9e6c6030c82e461e984ce6f
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publicationDate 2011-07-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-201123214-A
titleOfInvention Transparent conductive ZnO thin film doped with group IIIA elements and method for preparation thereof
abstract The present invention relates to a transparent conductive ZnO Thin Film Doped with IIIA Elements and method for preparation thereof, which primarily follows the steps of using zinc compound soluble in alcohol to be reactive solution, further doped with suitable amount of Group IIIA compound elements, i.e. gallium, boron, indium and aluminum, to be a precursor solution, coated on a substrate by a sol-gel method, organic matters thereon removed swiftly to obtain oxide crystal by a resonance heating method, and at last a high-transparent and low-resistivity conducive thin film to be obtained via a vacuum thermal treatment. The aforesaid ZnO Thin Film has a high transmittance of visible light over 80% and an optimum resistibility of 2.0x10<SP>-3</SP> Ω cm.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113066900-A
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priorityDate 2009-12-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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