| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bc905cbef116a1ec61d12125af9427f3 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-8416
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B63-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-8265
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B63-80
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-8833
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-011 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-24 |
| filingDate |
2009-12-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_51dace93c3ede3ae7e39685a4d0d05ad
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9d357979919849b5f639cf62b25bb5f4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3b2b17ae51e57d1660409125d5ae0a39
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6c4b86ab4492ef995c734a2e024a914e |
| publicationDate |
2011-06-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-201121035-A |
| titleOfInvention |
Resistance switching memory |
| abstract |
A resistance switching memory is introduced herein. The resistance switching memory includes a highly-insulating or resistance-switching material formed to cover the sidewall of a patterned metal line, and extended alongside a dielectric layer sidewall to further contact a portion of the top surface of the lower electrode. The other part of the top surface of the lower electrode is covered by an insulating layer between the top electrode and the lower electrode. An oxygen gettering metal layer in the lower electrode occupies a substantial central part of the top surface of the lower electrode and is partially covered by the highly-insulating or resistance-switching material. A switching area is naturally very well confined to the substantial central part of the oxygen gettering metal layer of the lower electrode. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-111129292-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-111129292-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I584508-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I723564-B |
| priorityDate |
2009-12-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |