abstract |
Disclosed are thermal and/or plasma-enhanced CVD, ALD, and/or pulse CVD processes to deposit alkaline earth metal fluoride-based films, such as MgF2, at temperatures ranging from about 25 DEG C to about 300 DEG C, preferably from about 50 DEG C to about 250 DEG C, and more preferably from about 100 DEG C to about 200 DEG C. |