| abstract |
The invention provides a thin film transistor comprising an active layer, the active layer comprising an IGZO-based oxide material, the IGZO-based oxide material being represented by a composition formula of In2-xGaxZnO4- δ, where 0.75 < x < 1.10 and 0 < δ ≤ 1.29161 x exp(-x/0.11802) + 0.00153 and being formed from a single phase of IGZO having a crystal structure of YbFe2O4, and a method of producing the thin film transistor. |