http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-201119035-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8441716d36cc9298b63d8a608d08cfbd |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
| filingDate | 2009-11-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d10bda392d08e8e18eae3815f10f0f0f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_50d275356afc1f721f5a85acf49a50bc |
| publicationDate | 2011-06-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-201119035-A |
| titleOfInvention | Power transistor structure |
| abstract | A power transistor structure is disclosed. The structure includes a first type heavily-doped substrate, which are orderly has a first type epitaxial layer, an insulation layer with a hole, and an epitaxial structure formed on the first-type epitaxial layer for filling the hole. An epitaxial structure includes a first and a second type doped region. The second type doped region is formed as the source region and disposed on the epitaxial structure of the first type doped region, which is adjacent to the first type doped region and the insulating layer. And the epitaxial structure includes a gate structure, which is formed on the surface of the first type doped region. The present invention utilizes the insulation characteristics to enable the transistor to endure high voltage, thereby enabling the transistor to have extremely high-power output. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9876106-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I567830-B |
| priorityDate | 2009-11-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 20.