http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-201115274-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_424db9d56b06a23aed410fcf5df652f3 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0045 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-004 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-027 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0271 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0382 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F1-68 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F1-24 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08F212-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-038 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-004 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08F232-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 |
| filingDate | 2010-05-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_234f320334f9a97fe9e39a3fe7148a86 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b407ce24c25aac286c10a2e26b32a888 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_071aa39a2746bf7a509259cff1c77632 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_45e4c070ff6a95b208661202d0247a07 |
| publicationDate | 2011-05-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-201115274-A |
| titleOfInvention | Negative resist composition and patterning process using the same |
| abstract | There is disclosed a negative resist composition comprising (A) a base polymer which is soluble in alkali and which is insolubilized in alkali by an action of an acid; and/or a combination of a crosslinking agent and a base polymer which is soluble in alkali and which is reacted with the crosslinking agent by an action of an acid to thereby be insolubilized in alkali, (B) an acid generator, and (C) a nitrogen-containing compound as a basic component; wherein the polymer to be used as the base polymer is: a polymer, which is obtained by polymerizing two or more kinds of monomers represented by the following general formula (1), or which is obtained by polymerizing a monomer mixture containing one or more kinds of monomers represented by the general formula (1) and one or more kinds of styrene monomers represented by the following general formula (2); or a polymer obtained by subjecting the functional groups of the polymerizedly obtained polymer to a further chemical conversion; and wherein the repeating units derived from the monomers represented by the general formula (1) are included in the obtained polymer at a sum ratio of 50 mole% or more relative to a total amount of all repeating units constituting the obtained polymer. There can be provided a negative resist composition having an excellent resolution and an enhanced etching resistance in photolithography for fine processing, and particularly in lithography adopting, as an exposure source, KrF laser, extreme ultraviolet rays, electron beam, X-rays, or the like; and a patterning process using the same. |
| priorityDate | 2009-05-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
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