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publicationDate 2011-05-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-201115263-A
titleOfInvention Mask blank and transfer mask
abstract Provided is a mask blank to which EB defect correction can be suitably applied and which allows a light-blocking film to be made thinner. The provided mask blank (10) has a light-blocking film (2) on top of a light-transmitting substrate (1) and is used to create a transfer mask to which ArF exposure light is applied. The light-blocking film (2) consists primarily of a material that contains a transition metal, silicon, and oxygen and/or nitrogen. With this light-blocking film, an etching rate when a fluorine-containing substance is not irradiated by charged particles is at least slow enough to ensure etch selectivity with respect to an etching rate when a fluorine-containing substance is irradiated by charged particles.
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priorityDate 2009-07-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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